Plasma processing apparatus and method of manufacturing semiconductor device using the same
US11348760B2 · kind B2 · utility
0Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2020 |
| Grant date | May 31, 2022 |
| Priority date | — |
| Expiry date | Jun 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.