Magnetic tunnel junction structures and related methods
US11355696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2020 |
| Grant date | Jun 7, 2022 |
| Priority date | — |
| Expiry date | Jun 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel junction. Below the conductive lower electrode is a first conductive via structure in a first dielectric layer. Below the conductive via structure is a discrete conductive jumper structure in a second dielectric layer. A dielectric body of a third dielectric material that is different from the first dielectric material and the second dielectric material extends vertical from the first dielectric layer at least partially into the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.