Inventor · Hubei, CN

Jun Chen

70Patents
8h-index
59Co-inventors
77Inventor score

Filing activity: Jul 30, 2014 → Nov 21, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10283452B2 Three-dimensional memory devices having a plurality of NAND strings Electricity 46 Active
US10147732B1 Source structure of three-dimensional memory device and method for forming the same Electricity 43 Active
US10593690B2 Hybrid bonding contact structure of three-dimensional memory device Electricity 20 Active
US10930661B2 Embedded pad structures of three-dimensional memory devices and fabrication methods thereof Electricity 12 Active
US11133325B2 Memory cell structure of a three-dimensional memory device Electricity 11 Active
US10026967B2 Composite three-dimensional electrodes and methods of fabrication Emerging Cross-Sectional Technologies 9 Active
US9871255B2 Modular electrochemical cells Emerging Cross-Sectional Technologies 8 Active
US10580788B2 Methods for forming three-dimensional memory devices Electricity 8 Active
US10515975B1 Method for forming dual-deck channel hole structure of three-dimensional memory device Electricity 6 Active
US10679941B2 Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof Electricity 6 Active
US10923491B2 Hybrid bonding contact structure of three-dimensional memory device Electricity 5 Active
US10867678B2 Three-dimensional memory devices Electricity 5 Active
US11031333B2 Three-dimensional memory devices having a plurality of NAND strings Electricity 5 Active
US10680003B2 Staircase structure for memory device Electricity 4 Active
US10784225B2 Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same Electricity 4 Active
US10637068B2 Modular electrochemical cells Emerging Cross-Sectional Technologies 4 Active
US11211397B2 Three-dimensional memory devices and methods for forming the same Electricity 4 Active
US10644015B2 Memory cell structure of a three-dimensional memory device Electricity 3 Active
US11355696B2 Magnetic tunnel junction structures and related methods Electricity 3 Active
US11527547B2 Hybrid bonding contact structure of three-dimensional memory device Electricity 3 Active
US10840125B2 Memory structure and method for forming the same Electricity 3 Active
US10672711B2 Word line contact structure for three-dimensional memory devices and fabrication methods thereof Electricity 3 Active
US11049834B2 Hybrid bonding using dummy bonding contacts Electricity 2 Active
US10804279B2 Source structure of three-dimensional memory device and method for forming the same Electricity 2 Active
US11758732B2 Hybrid bonding contact structure of three-dimensional memory device Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.