Radiofrequency device and manufacturing method thereof
US11362048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Sep 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/81193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A radiofrequency device includes a buried insulation layer, a transistor, a contact structure, a connection bump, an interlayer dielectric layer, and a mold compound layer. The buried insulation layer has a first side and a second side opposite to the first side in a thickness direction of the buried insulation layer. The transistor is disposed on the first side of the buried insulation layer. The contact structure penetrates the buried insulation layer and is electrically connected with the transistor. The connection bump is disposed on the second side of the buried insulation layer and electrically connected with the contact structure. The interlayer dielectric layer is disposed on the first side of the buried insulation layer and covers the transistor. The mold compound layer is disposed on the interlayer dielectric layer. The mold compound layer may be used to improve operation performance and reduce manufacturing cost of the radiofrequency device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.