Inverse T-shaped contact structures having air gap spacers
US11362193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Jun 14, 2022 |
| Priority date | — |
| Expiry date | Oct 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating air gap spacers is provided. The method includes forming gate structures to extend upwardly from a substrate with source or drain (S/D) regions disposed between the gate structures and with contact trenches defined above the S/D regions and between the gate structures. The method further includes disposing contacts in the contact trenches. The method also includes configuring the contacts to define open-ended air gap spacer trenches with the gate structures. In addition, the method includes forming a cap over the open-ended air gap spacer trenches to define the open-ended air gap spacer trenches as air gap spacers. The gate structures have an initial structure prior to and following the disposing and the configuring of the contacts and prior to and following the forming of the cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.