Annealing processes for memory devices

US11362275B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Nicolas L. Breil · Wappingers Falls, US
• Siddarth A. Krishnan · Newark, US
• Shashank Sharma · San Jose, US
• Ria Someshwar · Mountain View, US
• Kai Ng · San Jose, US
• Deepak Kamalanathan · Santa Clara, US

Key dates

• Filing date: Apr 22, 2020
• Grant date: Jun 14, 2022
• Expiry date: Dec 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/063

Abstract

Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500° C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.