Plasma processing method and plasma processing apparatus
US11367590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2019 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Jul 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.