Patent · US Active

Multizone flow gasbox for processing chamber

US11367594B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Mingle Tong · Sunnyvale, US
Li-Qun Xia · Santa Clara, US
Daemian Raj · Sunnyvale, US

Key dates

Filing date	Nov 27, 2019
Grant date	Jun 21, 2022
Priority date	—
Expiry date	Nov 30, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/335
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Exemplary semiconductor processing chambers may include a gasbox characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel extending about the central aperture. The annular channel may be fluidly accessible from the first surface of the gasbox. The gasbox may further define a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.