Semiconductor device with through-substrate via

US11367672B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Jochen Kraft · Bruck an der Mur, AT
• Georg Parteder · Gleisdorf, AT
• Anderson PIRES SINGULANI · Eindhoven, NL
• Raffaele Coppeta · Graz, AT
• Franz Schrank · Graz, AT

Key dates

• Filing date: Mar 20, 2019
• Grant date: Jun 21, 2022
• Expiry date: Mar 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/05624
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.5 times the lateral extent of the via in the lateral direction, and the lateral extent of the contact layer is smaller than the lateral extent of the via or the lateral extent of the contact layer amounts to at least 2.5 times the lateral extent of the via.