Methods for selective deposition of dielectric on silicon oxide

US11371136B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Bhaskar Jyoti Bhuyan · San Jose, US
• Mark Saly · Santa Clara, US
• David Thompson · San Jose, US
• Lakmal C. Kalutarage · San Jose, US
• Rana Howlader · Santa Clara, US

Key dates

• Filing date: Sep 19, 2018
• Grant date: Jun 28, 2022
• Expiry date: Mar 21, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.