FFT-dram
US11373696B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2021 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Feb 19, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flat field transistor (FFT) based dynamic random-access memory (DRAM) (FFT-DRAM) is disclosed. The FFT-DRAM comprises an epitaxially grown source region comprising a source extension and an epitaxial source over and in contact with the source extension. The epitaxially grown source region is over a surface of a semiconductor substrate. The FFT-DRAM further comprises a trench capacitor structurally integrated into the epitaxially grown source region. The trench capacitor has a first terminal formed by the epitaxially grown source region and a second terminal being a conductive material filling one or more trenches of the trench capacitor. The second terminal is connected to a ground terminal or a fixed voltage terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.