Technique for semiconductor manufacturing
US11373878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2021 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Jan 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for semiconductor manufacturing is provided. The technique includes the operations as follows. A semiconductor structure having a first material and a second material is revived. The first material has a first incubation time to a first etching chemistry. The second material has a second incubation time to the first etching chemistry. The first incubation time is shorter than the second incubation time. A first main etch to the semiconductor structure for a first duration by the first etching chemistry is performed. The first duration is greater than the first incubation time and shorter than the second incubation time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.