Method for manufacturing a semiconductor on insulator type structure by layer transfer
US11373898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2019 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Feb 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68363
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor on insulator type structure by transfer of a layer from a donor substrate onto a receiver substrate, comprises: a) the supply of the donor substrate and the receiver substrate, b) the formation in the donor substrate of an embrittlement zone delimiting the layer to transfer, c) the bonding of the donor substrate on the receiver substrate, the surface of the donor substrate opposite to the embrittlement zone with respect to the layer to transfer being at the bonding interface, and d) the detachment of the donor substrate along the embrittlement zone. A step of controlled modification of the curvature of the donor substrate and/or the receiver substrate is performed before the bonding step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.