Patent · US Active

Semiconductor package and forming method thereof

US11374136B2 · kind B2 · utility

1Cited by
10References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 20, 2020
Grant dateJun 28, 2022
Priority date
Expiry dateMay 23, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1815
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.