Dielectric-dielectric and metallization bonding via plasma activation and laser-induced heating

US11374148B2 · kind B2 · utility

Assignee

• Facebook Technologies, LLC · US

Inventors

• Daniel Brodoceanu · Cork, IE
• Oscar Torrents Abad · Riegelsberg, DE
• Jeb Wu · Redmond, US
• Zheng Sung Chio · Cork, IE
• Sharon Nanette Farrens · Cork, IE
• Ali Sengül · Zürich, CH
• Tennyson Nguty · Cork, IE

Key dates

• Filing date: Jan 21, 2020
• Grant date: Jun 28, 2022
• Expiry date: Jan 21, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.