Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory

US11374164B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Tanay Gosavi · Portland, US
• Sasikanth Manipatruni · Ithaca, US
• Chia-Ching Lin · Daxi District, TW
• Kaan Oguz · Beaverton, US
• Christopher J. Wiegand · Portland, US
• Angeline Smith · Hillsboro, US
• Noriyuki Sato · Hillsboro, US
• Kevin P. O'Brien · Cincinnati, US
• Benjamin Buford · Hillsboro, US
• Ian A. Young · Portland, US
• MD Tofizur Rahman · Portland, US

Key dates

• Filing date: Jun 29, 2018
• Grant date: Jun 28, 2022
• Expiry date: Oct 28, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.