Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same
US11377733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Aug 7, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing tungsten over a substrate includes disposing the substrate into a vacuum enclosure of a tungsten deposition apparatus, performing a first tungsten deposition process that deposits a first tungsten layer over a physically exposed surface of the substrate by flowing a fluorine-containing tungsten precursor gas into the vacuum enclosure, performing an in-situ oxidation process by exposing the first tungsten layer to an oxidation agent gas while the substrate remains within the vacuum enclosure without breaking vacuum and forming a tungsten oxyfluoride gas which is pumped out of the vacuum enclosure, and performing a second tungsten deposition process that deposits a second tungsten layer on the first tungsten layer by flowing the fluorine-containing tungsten precursor gas into the vacuum enclosure in a second tungsten deposition process after the in-situ oxidation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.