Patent · US Active

Device and method for monitoring the health of a power semiconductor die

US11378612B2 · kind B2 · utility

0Cited by

10References

17Claims

0Family size

Assignee

Mitsubishi Electric Corporation · JP

Inventors

Nicolas DEGRENNE · Rennes, FR
Stefan Mollov · Rennes, FR
Jeffrey Ewanchuk · Rennes, FR

Key dates

Filing date	Feb 26, 2018
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Aug 1, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG01R31/311
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A device having at least one power semiconductor die coated with a metallization and at least one light guide having two opposite ends. The first end is able to be connected at least to a light source and to a light receiver. The second end is permanently fixed facing to a surface of the metallization such that to form a light path towards said surface and a light path from said surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.