Method for fabricating a monocrystalline structure
US11380543B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Dec 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate is provided with a monocrystalline silicon-germanium layer with a first surface covered by a protective oxide obtained by wet process and having a degradation temperature. The protective oxide is transformed into fluorinated salt which is then eliminated. The substrate is placed in a processing chamber at a lower temperature than the degradation temperature and is subjected to a temperature ramp up to a higher temperature than the degradation temperature. The first surface is annealed in a hydrogen atmosphere devoid of silicon, germanium and precursors of the materials forming the target layer. When the temperature ramp is applied, a silicon precursor is inserted in the processing chamber between a loading temperature and the degradation temperature to deposit a monocrystalline buffer layer. A mono-crystalline target layer is deposited by chemical vapour deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.