Multicathode deposition system
US11387085B2 · kind B2 · utility
1Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2019 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Aug 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3417
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising one or more of contours that reduce particle defects, temperature control and or measurement and and/or voltage particle traps to reduce processing defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.