Semiconductor device containing bit lines separated by air gaps and methods for forming the same
US11387142B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2021 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Mar 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor device, bit lines electrically connected to the semiconductor device, air gaps located between the bit lines, a capping-level material layer, a via-level dielectric material layer located between the bit lines and the capping-level material layer, and conductive via structures extending through the via-level dielectric material layer and contacting a top surface of a respective one of the bit lines. The capping-level material layer contains cavity-containing openings exposing the air gaps. The capping-level material layer contains protruding portions that extend into peripheral regions of the cavity-containing openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.