Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same
US11390635B2 · kind B2 · utility
2Cited by
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14Claims
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Key dates
| Filing date | Nov 22, 2018 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.