Patent · US Active

Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal

US11390962B2 · kind B2 · utility

0Cited by

4References

5Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Georg Raming · Tann, DE
Ludwig Stockmeier · Dresden, DE
Jochen Friedrich · Eckental, DE
Matthias Daniel · Stockholm, SE
Alfred Miller · Emmerting, DE

Key dates

Filing date	Aug 28, 2018
Grant date	Jul 19, 2022
Priority date	—
Expiry date	Oct 6, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/06
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.