Georg Raming
7Patents
0h-index
15Co-inventors
38Inventor score
Filing activity: Jan 13, 2011 → Dec 3, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11390962B2 | Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal | Chemistry; Metallurgy | 0 | Active |
| US9932691B2 | Method for growing a single crystal by crystallizing the single crystal from a float zone | Chemistry; Metallurgy | 0 | Active |
| US9422634B2 | Method and apparatus for producing a single crystal | Emerging Cross-Sectional Technologies | 0 | Active |
| US8357590B2 | Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm | Emerging Cross-Sectional Technologies | 0 | Active |
| US9828693B2 | Apparatus and process for producing a crystal of semiconductor material | Emerging Cross-Sectional Technologies | 0 | Active |
| US12104274B2 | Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopant | Chemistry; Metallurgy | 0 | Active |
| US9932690B2 | Device for producing a monocrystal by crystallizing said monocrystal in a melting area | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.