Patent · US Active

Producing a buried cavity in a semiconductor substrate

US11393714B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andre Roeth · Dresden, DE
Boris Binder · Dresden, DE
Thoralf Kautzsch · Dresden, DE
Uwe Rudolph · Dresden, DE
Maik Stegemann · Freital, DE
Mirko Vogt · Dresden, DE

Key dates

Filing date	Jul 7, 2020
Grant date	Jul 19, 2022
Priority date	—
Expiry date	Dec 28, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3065
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.