Methods of forming a microelectronic device, and related microelectronic devices, memory devices, and electronic systems
US11393908B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2021 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Feb 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device comprises a conductive structure, a metal nitride material, and a metal silicide material. The conductive structure comprises a first portion having a first width, and a second portion under the first portion and extending into a semiconductive material. The second portion has a tapered profile defining additional widths varying from the first width at an upper boundary of the second portion to a second width less than the first width at a lower boundary of the second portion. The metal nitride material substantially surrounds outer surfaces of the first portion and the second portion of the conductive structure. The metal silicide material substantially covers outer surfaces of the metal nitride material within vertical boundaries of the second portion of the conductive structure. Related methods, memory devices, and electronic systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.