Power device including metal layer
US11398437B2 · kind B2 · utility
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20Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Jul 26, 2022 |
| Priority date | — |
| Expiry date | Dec 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes a substrate having an edge, an insulating layer disposed over the substrate, a metal layer disposed over the insulating layer and including a first portion and a second portion, a coating layer disposed over the metal layer, and a protective layer covering the substrate, the insulating layer, the metal layer, and the coating layer. The first portion has a first thickness and the second portion has a second thickness that is greater than the first thickness, and the second portion is disposed farther apart from the edge of the substrate than the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.