Thomas Neyer
16Patents
2h-index
34Co-inventors
50Inventor score
Filing activity: Aug 29, 2005 → Apr 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10388526B1 | Semiconductor wafer thinning systems and related methods | Electricity | 8 | Active |
| US10950596B2 | Diode with current sensor | Electricity | 2 | Active |
| US11481532B2 | Systems and methods for designing a discrete device product | Physics | 1 | Active |
| US11373859B2 | Semiconductor substrate singulation systems and related methods | Electricity | 1 | Active |
| US10896815B2 | Semiconductor substrate singulation systems and related methods | Electricity | 1 | Active |
| US10665458B2 | Semiconductor wafer thinning systems and related methods | Electricity | 1 | Active |
| US11605732B2 | Power device with graded channel | Electricity | 0 | Active |
| US11817478B2 | Termination structures with reduced dynamic output capacitance loss | Electricity | 0 | Active |
| US10629686B2 | Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device | Electricity | 0 | Active |
| US7191085B2 | Method for testing an electric circuit | Physics | 0 | Expired |
| US11398437B2 | Power device including metal layer | Electricity | 0 | Active |
| US12125884B2 | MOSFET device with undulating channel | Electricity | 0 | Active |
| US11152211B2 | Semiconductor wafer thinning systems and related methods | Electricity | 0 | Active |
| US11658214B2 | MOSFET device with undulating channel | Electricity | 0 | Active |
| US11652027B2 | Vertical transistors with gate connection grid | Electricity | 0 | Active |
| US11880642B2 | Systems and methods for designing a discrete device product | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.