Plating apparatus and method for electroplating wafer

US11401624B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Che-Min Lin
• Hung-San Lu · Kaohsiung, TW
• Chao-Lung Chen · Tainan, TW
• Chao-Yuan Chang · Cupertino, US
• Chun-An Kung · 員林市, TW
• Chin-Hsin Hsiao · Tainan, TW
• Wen-Chun Hou · Tainan, TW
• Szu-Hung Yang · Tainan, TW
• Ping Jiang · Clemson, US

Key dates

• Filing date: Jul 22, 2020
• Grant date: Aug 2, 2022
• Expiry date: Nov 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2885
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.