Deposition of low-stress carbon-containing layers
US11404263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Aug 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50° C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sp3 hybridized bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.