Film deposition method
US11404265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Jul 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.