Method of etching film and plasma processing apparatus
US11404282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2020 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.