MRAM structure and method of fabricating the same
US11404631B2 · kind B2 · utility
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3References
7Claims
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Key dates
| Filing date | Jul 9, 2019 |
| Grant date | Aug 2, 2022 |
| Priority date | — |
| Expiry date | Aug 5, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.