Method for heat-treating silicon single crystal wafer
US11408092B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 25, 2018 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Dec 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.