Impurity removal in doped ALD tantalum nitride
US11410881B2 · kind B2 · utility
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Key dates
| Filing date | Jun 28, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.