Lu Chen
17Patents
2h-index
27Co-inventors
54Inventor score
Filing activity: Apr 2, 1987 → Dec 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8778783B2 | Methods for improved growth of group III nitride buffer layers | Electricity | 3 | Active |
| US4748878A | Impact socket wrench or an attachment assembly with hammering effect | Emerging Cross-Sectional Technologies | 3 | Expired |
| US11955382B2 | Reverse selective etch stop layer | Electricity | 0 | Active |
| US12431358B2 | Methods and materials for enhanced barrier performance and reduced via resistance | Electricity | 0 | Active |
| US12243774B2 | Impurity removal in doped ALD tantalum nitride | Electricity | 0 | Active |
| US11784127B2 | Ruthenium liner and cap for back-end-of-line | Electricity | 0 | Active |
| US11270911B2 | Doping of metal barrier layers | Electricity | 0 | Active |
| US11764157B2 | Ruthenium liner and cap for back-end-of-line applications | Electricity | 0 | Active |
| US12195845B2 | Conditioning treatment for ALD productivity | Electricity | 0 | Active |
| US8853086B2 | Methods for pretreatment of group III-nitride depositions | Electricity | 0 | Active |
| US8980002B2 | Methods for improved growth of group III nitride semiconductor compounds | Chemistry; Metallurgy | 0 | Active |
| US11410881B2 | Impurity removal in doped ALD tantalum nitride | Electricity | 0 | Active |
| US9303318B2 | Multiple complementary gas distribution assemblies | Emerging Cross-Sectional Technologies | 0 | Active |
| US12211743B2 | Method of forming a metal liner for interconnect structures | Electricity | 0 | Active |
| US8882870B2 | Coated tool | Emerging Cross-Sectional Technologies | 0 | Active |
| US12148660B2 | Low resistance and high reliability metallization module | Electricity | 0 | Active |
| US11566324B2 | Conditioning treatment for ALD productivity | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.