Microelectronic devices including stair step structures, and related electronic devices and methods
US11411013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2020 |
| Grant date | Aug 9, 2022 |
| Priority date | — |
| Expiry date | Jan 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device comprises a stack structure comprising a stack structure comprising alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures, staircase structures within the stack structure and having steps comprising edges of the tiers, and a doped dielectric material adjacent the steps of the staircase structures and comprising silicon dioxide doped with one or more of boron, phosphorus, carbon, and fluorine, the doped dielectric material having a greater ratio of Si—O—Si bonds to water than borophosphosilicate glass. Related methods of forming a microelectronic device and related electronic systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.