Lithographic patterning process and resists to use therein
US11415886B2 · kind B2 · utility
0Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Jul 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.