Integration of multiple discrete GaN devices
US11417644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2020 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Examples of integrated semiconductor devices are described. In one example, an integrated device includes first and second transistors formed on a substrate, where the transistors share a terminal metal feature to reduce a size of the integrated device. The terminal metal feature can include a shared source electrode metalization, for example, although other electrode metalizations can be shared. In other aspects, a first width of a gate of the first transistor can be greater than a second width of a gate of the second transistor, and the shared metalization can taper from the first width to the second width. The integrated device can also include a metal ground plane on a backside of the substrate, and the terminal metal feature can also include an in-source via for the shared source electrode metalization. The in-source via can electrically couple the shared source electrode metalization to the metal ground plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.