Semiconductor device
US11417649B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Nov 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8314
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a transistor. The transistor includes an active region in a substrate, a patterned conductive layer being a portion of an interconnection layer for routing, and an insulating layer extending over the substrate and configured to insulate the active region from the patterned conductive layer. The patterned conductive layer and the insulating layer serve as a gate of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.