Semiconductor structure having buried gate electrode with protruding member and method of manufacturing the same

US11417744B2 · kind B2 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventor

• Tseng-Fu Lu · New Taipei, TW

Key dates

• Filing date: Sep 24, 2020
• Grant date: Aug 16, 2022
• Expiry date: Sep 24, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/00

Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure comprises a substrate comprising a first top surface; an isolation region disposed in the substrate; an active region surrounded by the isolation region; a gate trench disposed in the active region; a first barrier layer disposed on a portion of a sidewall of the gate trench; a first gate material disposed in the gate trench, wherein the first gate material comprises a first member surrounded by the first barrier layer and a second member extending from the first member toward the first top surface; a second barrier layer disposed on the first barrier layer and the first gate material; a second gate material disposed on the second barrier layer; and a gate insulating material disposed on the second gate material.