Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory
US11417830B2 · kind B2 · utility
4Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Aug 16, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments herein relate to magnetically doping a spin orbit torque electrode (SOT) in a magnetic random access memory apparatus. In particular, the apparatus may include a free layer of a magnetic tunnel junction (MTJ) coupled to a SOT electrode that is magnetically doped to apply an effective magnetic field on the free layer, where the free layer has a magnetic polarization in a first direction and where current flowing through the magnetically doped SOT electrode is to cause the magnetic polarization of the free layer to change to a second direction that is substantially opposite to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.