Bi-directional sensing in a memory
US11423993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2019 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Nov 6, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method reading memory using bi-directional sensing, including programming first memory cells coupled to a first word-line using a normal programming order; programming second memory cells coupled to a second word-line using a normal programming order; reading data from the first memory cells by applying a normal sensing operation to the first word-line; and reading data from the second memory cells by applying a reverse sensing operation to the second word-line. Methods also include receiving an error associated with reading data from the first memory cells; and then reading the data from the first memory cells by applying a reverse sensing operation to the first word-line. Method also include receiving an error associated with reading the data from the second memory cells; and then reading the data from the second memory cells by applying a normal sensing operation to the second word-line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.