Method of forming a patterned hard mask and method of forming conductive lines
US11424124B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2020 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Apr 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a patterned hard mask includes: forming first photoresist features on a hard mask layer; forming at least one sacrificial feature between immediately-adjacent two of the first photoresist features on the hard mask layer; performing a trimming process to the first photoresist features to form second photoresist features; and using the at least one sacrificial feature and the second photoresist features as etching mask, and performing a first etching process to the hard mask layer, in which a plurality of trenches are formed in the hard mask layer to obtain the patterned hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.