Methods and apparatus for controlling contact resistance in cobalt-titanium structures
US11424132B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Oct 2, 2019 |
| Grant date | Aug 23, 2022 |
| Priority date | — |
| Expiry date | Jun 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.