Patent · US Active

Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device

US11424201B2 · kind B2 · utility

0Cited by

0References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Rogalli · Rottenburg am Neckar, DE
Johann Gatterbauer · Parsberg, DE
Wolfgang Lehnert · Lintach, DE
Kurt Matoy · Strau, AT
Evelyn Napetschnig · Diex, AT
Manfred Schneegans · Vaterstetten, DE
Bernhard Weidgans · Bernhardswald, DE

Key dates

Filing date	Jun 19, 2018
Grant date	Aug 23, 2022
Priority date	—
Expiry date	Sep 2, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15747
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.