Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof

US11424253B2 · kind B2 · utility

Assignees

• NAMLAB GGMBH · DE
• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Johannes Mueller · Berlin, DE
• Stefan Mueller · Villingen, DE
• Stefan Flachowsky · Dresden, DE

Key dates

• Filing date: Jan 8, 2018
• Grant date: Aug 23, 2022
• Expiry date: Apr 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

An illustrative device disclosed herein includes a semiconductor substrate. The substrate includes a source region, a drain region and a channel region. The channel region is arranged between the source region and the drain region. A gate insulation layer is provided over the channel region. A floating gate electrode is provided over the gate insulation layer. A layer of a ferroelectric material is provided over the floating gate electrode. A top electrode is provided over the layer of ferroelectric material. A projected area of the top electrode onto a plane that is perpendicular to a thickness direction of the semiconductor substrate is smaller than a projected area of the floating gate electrode onto the plane.