Initiation modulation for plasma deposition
US11430654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2019 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | May 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Exemplary deposition methods may include forming a plasma of an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include, while maintaining the plasma of the oxygen-containing precursor, flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber at a first flow rate. The methods may include ramping the first flow rate of the silicon-containing precursor over a period of time to a second flow rate greater than the first flow rate. The methods may include depositing a silicon-containing material on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.