Antiferroelectric memory devices and methods of making the same
US11430813B2 · kind B2 · utility
1Cited by
16References
19Claims
0Family size
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Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Oct 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B51/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antiferroelectric memory device includes at least one antiferroelectric memory cell. Each of the at least one antiferroelectric memory cell includes a first electrode, a second electrode and a stack containing an antiferroelectric layer and a doped semiconductor layer or a ferroelectric layer located between the first and the second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.