Gate all around structure with additional silicon layer and method for forming the same
US11430891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Aug 30, 2022 |
| Priority date | — |
| Expiry date | Nov 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for manufacturing a semiconductor structure is provided. The method for manufacturing the semiconductor structure includes forming nanowire structures over a substrate and forming a gate structure across nanowire structures. The method for manufacturing the semiconductor structure also includes forming a source/drain structure adjacent to the gate structure and forming a Si layer over the source/drain structure. The method for manufacturing the semiconductor structure also includes forming a SiGe layer over the Si layer and oxidizing the SiGe layer to form an oxide layer. The method for manufacturing the semiconductor structure also includes forming a contact through the Si layer over the source/drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.